The performance requirements for base stations and handsets are becoming ever more stringent as 5G-and-beyond applications gain in adoption and increase in sophistication.
At the same time, power control systems require kV-range material solutions combining high performance, manufacturability, and integration capability. With a wide range of innovative III-N epitaxial materials grown on Si, SiC, and GaN substrates, IQE leverages 25 years of GaN epitaxy experience to enable the most demanding RF and Power applications.
Advanced Nitrides: Next Generation RF and Power
InAl(Ga)N HEMTs: Enabling Ultra-High Frequency
GaN/GaN p-n diode: High Performance Vertical Device
