2012 research papers

Y. Zhu, N. Jain, D.K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, A.W.K. Liu, and M.K. Hudait, “Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure,” Appl. Phys. Letters., 101, 112106 (2012).

D. Mohata, B. Rajamohanan, T. Mayer, V. Narayanan, J. Fastenau, D. Lubyshev, A.W.K. Liu, and S. Datta, “Barrier Engineered Arsenide-Antimonide Hetero-junction Tunnel FETs with Enhanced Drive Current,” IEEE Electron Dev. Letts., DOI: 10.1109/LED.2012.2213333 (2012).

E. Lobisser, J.C. Rode, V. Jain, H.-W. Chiang, A. Baraskar, W.J. Mitchell, B.J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and A.W.K. Liu, “InGaAs/InP DHBTs with Emitter and Base Defined through Electron-Beam Lithography for Reduced Ccb and Increased RF Cut-off Frequency,” 24th InP and Related Materials Conference, Santa Barbara, CA, Aug 27–30, 2012, Th-1C.2.

E. H. Steenbergen, BC. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y.-H. Zhang, “Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II Superlattices,” Proc. SPIE Vol. 8512, Infrared Sensors, Devices, and Applications II, Eds. P.D. LeVan; A.K. Sood; P.S. Wijewarnasuriya; A.I. D'Souza, (ISBN 9780819492296, SPIE, Bellingham, WA 2012).

E.H. Steenbergen, B.C. Connelly, G.D. Metcale, P.H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y. -H. Zhang, “Study of the Minority Carrier Lifetime in Mid Wavelength Infrared InAs/InAs1-xSbx Type-II Superlattices, SPIE Optics + Photonics Conference, San Diego, CA, August 1216, 2012 (8512-20).

Y. Zhu, N. Jain, S. Vijayaraghavan, D.K. Mohata, S. Datta, D. Lubyshev, J.M. Fastenau, W.K. Liu, N. Monsegue, and M.K. Hudait, “Role of InAs and GaAs Terminated Heterointerfaces at Source/Channel on the Mixed As-Sb Staggered Gap Tunnel Field Effect Transistor Structures Grown by Molecular Beam Epitaxy,” J. Appl. Phys. 112, 024306 (2012).

A.W.K. Liu, D. Lubyshev, Y. Qiu, J.M. Fastenau, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr., “Production MBE Growth of Sb-based IR Detector Materials on Large Diameter Substrates,” Quantum Structured Infrared Photodetector Intl. Conf. (QSIP), Cargèse, Corsica, France, Jun 17–22, 2012, Th-2a.

D.K. Mohata, B. Rajamohanan, Y. Zhu, M.K. Hudait, R. Southwick, Z. Chbili, D. Gundlach, J. Suehle, J.M. Fastenau, D. Loubychev, A. Liu, T.S. Mayer, V. Narayanan, and S. Datta, “Demonstration of Improved Heteroepitaxy, Scaled Gate Stack and Reduced Interface States Enabling Heterojunction Tunnel FETs with High Drive Current and High On-Off Ratio,” 2012 IEEE Symposium on VLSI Technology, Honolulu, HI, Jun 1214, 2012 (6.5).

L.P. Allen, J.P. Flint, G. Meshew, G. Dallas, D. Bakken, J. Trevethan, D. Lubyshev, Y. Qiu, J.M. Fastenau, and A.W.K. Liu, “100mm GaSb Substrate Flatness for IRFPA Epi Growth,” SPIE Defense, Security & Sensing Conference, Baltimore, MD, April 2327, 2012 (8353-56); Proc. SPIE Vol. 8353, Infrared Technology and Applications XXXVIII, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (doi: 10.1117/12.919287, SPIE, Bellingham, WA 2012), 835313-1.

E.H. Steenbergen, B.C. Connelly, G.D. Metcale, P.H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y. -H. Zhang, “One giant leap for IR technology,” Compound Semiconductor Magazine, 18, Jan/Feb 2012 (p. 25).

Z. Tian, R.T. Hinkey, R.Q. Yang, D. Lubyshev, Y. Qiu, J.M. Fastenau, W.K. Liu, and M.B. Johnson, “Interband Cascade Infrared Photodetectors with Enhanced Electron Barriers and P-type Superlattice Absorbers,” J. Appl. Phys. 111, 024510 (2012).

D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, E.J. Koerperick, J.T. Olesberg, and D. Norton, Jr., “Manufacturable MBE Growth Process for Sb-based Superlattices on Large-diameter Substrates,” SPIE Photonics West 2012, San Francisco, CA, Jan 2126, 2012 (8268-45, invited); Proc. SPIE Vol. 8268, Quantum Sensing and Nanophotonic Devices IX, Eds. M. Razeghi, E. Tournie and G.J. Brown, (doi: 10.1117/12.909571, SPIE, Bellingham, WA 2012), 82681A-1

E.H. Steenbergen, O. Cellek, Y-H Zhang, D. Lubyshev, Y. Qiu, J.M. Fastenau, and A.W.K. Liu, “Valence band Offset Study for InAs/InAsSb Superlattice Infrared Detectors,” SPIE Photonics West 2012, San Francisco, CA, Jan 2162, 2012 (8268-19); Proc. SPIE Vol. 8268, Quantum Sensing and Nanophotonic Devices IX, Eds. M. Razeghi, E. Tournie and G.J. Brown, (doi: 10.1117/12.909614, SPIE, Bellingham, WA 2012), 82680K-1.

Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale-Rodriguez, Guowang Li, Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Thomas Kosel, Gregory Snider, Patrick Fay, Debdeep Jena, and Huili Xing, "InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and fT of 370 GHz," IEEE Electron Device Letters, 7 June 2012.

Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Liu, Amy W. K.; Koerperick, Edwin J.; Olesberg, Jon T.; Norton, Dennis, Jr. "Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates," Quantum Sensing and Nanophotonic Devices IX. Edited by Razeghi, Manijeh; Tournie, Eric; Brown, Gail J. Proceedings of the SPIE, Volume 8268, pp. 82681A-82681A-10 (2012).

L. P. Allen, J. P. Flint, G. Meshewm J. Trevethan, G. Dallas, A. Khoshakhlagh, C. J. Hill, "Manufacturing of 100mm diameter GaSb substrates for advanced space based applications," SPIE Photonics West, January 2012

"Multiwafer production of epitaxy ready 4” GaSb substrates: requirements for epitaxially grown infrared detectors," SPIE Photonics West, January 2012

L. P. Allen; J. P. Flint; G. Meshew; J. Trevethan; M. J. Furlong; B. Martinez; A. Mobray "Surface chemistry improvement of 100mm GaSb for advanced space based applications," Quantum Sensing and Nanophotonic Devices IX, Manijeh Razeghi; Eric Tournie; Gail J. Brown, Editors, 826819, 20 January 2012

Steenbergen, Elizabeth H.; Cellek, Oray O.; Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Liu, Amy W. K.; Zhang, Yong-Hang, "Study of the valence band offsets between InAs and InAs1-xSbx alloys," Quantum Sensing and Nanophotonic Devices IX. Edited by Razeghi, Manijeh; Tournie, Eric; Brown, Gail J. Proceedings of the SPIE, Volume 8268, pp. 82681A-82681A-10 (2012).

 

2011 research papers

D. K. Mohata, R. Bijesh , S. Mujumdar, C. Eaton, R.E. Herbert, T. Mayer, V. Narayanan, J. Fastenau, D. Loubychev, A. Liu and S. Datta, “Demonstration of MOSFET-Like On-Current Performance in Arsenide/Antimonide Tunnel FETs with Staggered Hetero-junctions for 300mV Logic Applications,” IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 57, 2011 (33.5).

M. Radosavljevic, G. Dewey, D. Basu, J. Boardman, B. Chu-Kung, J.M. Fastenau, S. Kabehie, J. Kavalieros, V. Le, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, H.W. Then and R. Chau, “Electrostatics Improvement in 3-D Tri-gate Over Ultra-Thin Body Planar InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Scaled Gate-to-Drain/Gate-to-Source Separation,” IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 57, 2011 (33.1).

G. Dewey, B. Chu-Kung, J. Boardman, J.M. Fastenau, J. Kavalieros, W.K. Liu, D. Lubyshev, M. Metz, N. Mukherjee, P. Oakey, R. Pillarisetty, M. Radosavljevic, H.W. Then, and R. Chau, “Fabrication, Characterization, and Physics of III-V Heterojunction Tunneling Field Effect Transistors (H-TFET) for Steep Sub-Threshold Swing,” IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 57, 2011 (33.6).

G N. Mukherjee, J. Boardman, B. Chu-Kung, G. Dewey, A. Eisenbach, J. Fastenau, J. Kavalieros, W.K. Liu, D. Lubyshev, M. Metz, K. Millard, M. Radosavljevic, T. Stewart, H.W. Then, P. Tolchinsky, and R. Chau, “MOVPE III-V Material Growth on Silicon Substrates and its Comparison to MBE for Future High Performance and Low Power Logic Applications,” IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 57, 2011 (35.1, invited).

E.H. Steenbergen, B.C. Connelly, G.D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J.M. Fastenau, A.W.K. Liu, S. Elhamri, O.O. Cellek, and Y. -H. Zhang, “Significantly Improved Minority Carrier Lifetime Observed in a Long-Wavelength Infrared III-V Type-II Superlattice Comprised of InAs/InAsSb,” Appl. Phys. Letts. 99, 251110 (2011).

W.K. Liu, D. Lubyshev, Y. Qiu, and J.M. Fastenau, “Production MBE growth of Sb-based 6.1A materials on GaSb and InAs substrates,” International Workshop on 6.1 Å II-VI and III-V Materials and Their Integration, Arizona State University, Tempe, AZ, Nov 89, 2011 (invited).

D. Wang, D. Donetsky, S. Svensson, S. Suchalkin, G. Belenky, W.K. Liu, J. Fastenau, D. Lubyshev, “Study of Minority Carrier Lifetime and Background Carrier Concentration in GaSb-InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response,” 53rd Electronic Materials Conference, University of California, Santa Barbara, CA, June 2224, 2011, R3.

V. Jain, J.C. Rode, H.-W. Chiang, A. Baraskar, E. Lobisser, B. J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, and W.K. Liu, “1.0 THz fmax InP DHBTs in a Refractory Emitter and Self-aligned Base Process for Reduced Base Access Resistance,” 69th Device Research Conference, University of California, Santa Barbara, CA, June 2224, 2011, VII.B.

V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP DHBTs in a Planarized, Etch-back Technology for Base Contacts,” 38rd International Symposium on Compound Semiconductors, Berlin, Germany, May 22–26, 2011, Th-2B.

V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP DHBTs Demonstrating Simultaneous fτ/fmax ~ 460/850 GHz in a Refractory Emitter Process,” 23rd InP and Related Materials Conference, Berlin, Germany, May 22–26, 2011.

Z. Tian, R.Q. Yang, D. Lubyshev, Y. Qiu, J.M. Fastenau, W.K. Liu, J.F. Klem, and M.B. Johnson, “Development of Interband Cascade Infrared Photodetectors,” Proc. SPIE Vol. 8012, Infrared Technology and Applications XXXVII, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (ISBN 9780819485861, SPIE, Bellingham, WA 2011), 80122U.

G. Belenky, S. Svensson, D. Donetsky, S. Suchalkin, D.Wang, D. Westerfeld, W. K. Liu, J. Fastenau, D. Lubyshev, “Effects of the Phonon Energy and Carrier Concentration on the Carrier Lifetime in LWIR and MWIR Type-2 SLS and MCT Materials for IR Photodetector Technology,” SPIE Defense, Security, and Sensing 2011, Orlando, FL, Apr 25 – 29, 2011, 8012-28.

T.E. Kazior, J.R. LaRoche, W. Hoke, E.A. Fitzgerald, M. Bulsara, M. Urteaga, J. Bergman, M.-J. Choe, K.-J. Lee, M. Seo, T. Seong, A. Yen, D. Lubyshev, J. M. Fastenau, and A.W.K. Liu, “Integration of III-V Transistors and Si CMOS on Silicon Substrates: A Path to Adaptable, Reconfigurable, High Performance Integrated Circuits,” 36th Annual GOMACTech Conference, Orlando FL, Mar 2124, 2011 (2.4).

D. Mohata, S. Mookerjea, A. Agrawal, Y. Li, T. Mayer, V. Narayanan, A. Liu, D. Loubychev, J. Fastenau, and S. Datta, “Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities,” Appl. Phys. Express 4, 024105 (2011).

V. Jain, E. Lobisser, A. Baraskar, B.J. Thibeault, M.J.W. Rodwell, Z. Griffith, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J.M. Fastenau, and W.K. Liu, “InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz,” IEEE Electron Dev. Letts. 32, 24 (2011).


2010 research papers

M. Radosavljevic, G. Dewey, J.M. Fastenau*, J. Kavalieros, R. Kotlyar, B. Chu-Kung, W. K. Liu*, D. Lubyshev*, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, R. Chau, Intel Corporation, *IQE, Inc., "Non-Planar, Multi-Gate InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Ultra-Scaled Gate-to-Drain/Gate-to-Source Separation for Low Power Logic Applications," 2010 International Electron Devices Meeting (IEDM), San Francisco, CA, December 6-8, 2010.

W.E. Hoke, T.D. Kennedy, J. LaRoche, A. Torabi, J. Bettencourt, P. Saledas, C.D. Lee, P.S. Lyman, T.E. Kazior, M.T. Bulsara, E.A. Fitzgerald, D. Lubyshev and W.K. Liu, “Molecular Beam Epitaxial Growth and Properties of GaAs Pseudomorphic High Electron Mobility Transistors on Silicon Composite Substrates,” J. Vac. Sci. Technol. B28, C3H1 (2010).

X. Gu, D. Lubyshev, J. Batzel, J.M. Fastenau, W.K. Liu, R. Pelzel, J.F. Magana, Q. Ma, and V.R. Rao, “Growth, Characterizations and Uniformity Analysis of 200 mm Wafer-scale SrTiO3/Si,” J. Vac. Sci. Technol. B28, C3A12 (2010).

T.E. Kazior, J.R. LaRoche, D. Lubyshev, J.M. Fastenau, W.K. Liu, M. Urteaga, J. Bergman, M.J. Choe, K.J. Lee, T. Seong, M. Seo, A. Yen, M.T. Bulsara, E.A. Fitzgerald, D. Smith, D. Clark, R.F. Thompson, C. Drazek, E. Guiot, “High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate,” IEEE 2010 Compound Semiconductor Conference, Monterey, CA, Oct. 3–6, 2010 (1092), TH1C.

D. Lubyshev, J.M. Fastenau, Y. Wu, W.K. Liu, M.T. Bulsara, E.A. Fitzgerald, M. Urteaga, W. Ha, J. Bergman, M.J. Choe, B. Brar, W.E. Hoke, J.R. LaRoche, T.E. Kazior, D. Smith, D. Clark, R.F. Thompson, C. Drazek, N. Daval, L. Benaissa, and E. Augendre, “Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS,” IBM Materials Research Community Workshop on III-V Compound Semiconductors, Zurich, Switzerland, Sep. 20–21, 2010 (invited).

V. Jain, E. Lobisser, A. Baraskar, B. J. Thibeault, M. Rodwell, Z. Griffith, M. Urteaga, S. T. Bartsch, D. Loubychev, A. Snyder, Y. Wu, J. M. Fastenau, and W.K. Liu, "High Performance 110 nm InGaAs/InP DHBTs in Dry-etched in situ Refractory Emitter Contact Technology ,” 68th Device Research Conference, University of Notre Dame, IN, June 21-23, 2010, IV.A-2.

R. Martinez, S. Amirhaghi, M.J. Furlong, D. Loubychev, J. Fastenau, and A.W.K. Liu, “Epitaxy Ready 4” GaSb Substrates: Requirements for MBE Grown Type II Superlattice Infrared Detectors,” Proc. SPIE Vol. 7660, Defense, Security, and Sensing 2010, Orlando, FL, Apr 5 – 9, 2010, 7660-48 (invited). “Large-format dual-broadband QWIP focal plane array imaging interferometers,” Proc. SPIE Vol. 5074, Infrared Technology and Applications XXXVI, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (ISBN 9780819481245, SPIE, Washington, 2010), 76601K (invited).

D. Lubyshev, J.M. Fastenau, X. Gu, A.W.K. Liu, J. Prineas, E.J. Koerperick, J.T. Olesberg, E.M. Jackson, J.A. Nolde, C. Yi, E. H. Aifer, “MBE Growth of Sb-based Type-II Strained Layer Superlattice Structures on Multi wafer Production Reactor,” Proc. SPIE Vol. 5074, Infrared Technology and Applications XXXVI, Eds. B.F. Andresen, G.F. Fulop, and P.R. Norton, (ISBN 9780819481245, SPIE, Washington, 2010), 76601J (invited).

W.E. Hoke, T.D. Kennedy, J. LaRoche, A. Torabi, J. Bettencourt, P. Saledas, C.D. Lee, P.S. Lyman, T.E. Kazior, M.T. Bulsara, E.A. Fitzgerald, D. Lubyshev and W.K. Liu, “Molecular Beam Epitaxial Growth and Properties of GaAs Pseudomorphic High Electron Mobility Transistors on Silicon Composite Substrates,” J. Vac. Sci. Technol. B28, C3H1 (2010).

X. Gu, D. Lubyshev, J. Batzel, J.M. Fastenau, W.K. Liu, R. Pelzel, J.F. Magana, Q. Ma, and V.R. Rao, “Growth, Characterizations and Uniformity Analysis of 200 mm Wafer-scale SrTiO3/Si,” J. Vac. Sci. Technol. B28, C3A12 (2010).


2009 research papers

M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey, M. K. Hudait, J. M. Fastenau*, J. Kavalieros, W. K. Liu*, D. Lubyshev*, M. Metz, K. Millard, N. Mukherjee, W. Rachmady, U. Shah, and Robert Chau, " Advanced High-K Gate Dielectric for High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect Transistors on Silicon Substrate for Low Power Logic Applications" 2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9, 2009.

Y.Q. Wu*, M. Xu, R. Wang, O. Koybasi, and P.D. Ye, “Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications,” 2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9, 2009.

Y.Q. Wu*, M. Xu, R. Wang, O. Koybasi, and P.D. Ye, “High-performance Deep-submicron Inversion-mode InGaAs MOSFETs with Maximum Gm exceeding 1.1 mS/µm: New HBr Pretreatment and Channel Engineering,” 2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7 9, 2009.

Y.Q. Wu*, R. Wang, T. Shen, J.J. Gu, and P.D. Ye, “First Experimental Demonstration of 100 nm Inversion-mode InGaAs FinFET through Damage-free Sidewall Etching,” 2009 International Electron Devices Meeting (IEDM), Baltimore, MD, December 7-9, 2009.