2007 research papers

M.K. Hudait, S. Datta, G. Dewey, J.M. Fastenau, J. Kavalieros, W.K. Liu, D. Loubychev, R. Pillarisetty, M. Radosavljevic and R. Chau, “Heterogeneous Integration of Enhancement Mode In0.7Ga0.3As Quantum Well Transistor on Silicon Substrate using Composite Buffer Architecture for High-Speed and Low-voltage (e.g., 0.5V) Digital Logic Applications”, IEEE International Electron Device Meeting (IEDM), Washington, DC, Dec 10-12, 2007 (23.5).

D. Lubyshev, J. M. Fastenau, W.K. Liu, Y. Wu, M. T. Bulsara, E. A. Fitzgerald, and W. E. Hoke, “MBE Growth of M-HEMTs and M-HBTs on Ge and Ge-on-Insulator Substrates”, 25th North American Conference on Molecular Beam Epitaxy, Albuquerque, NM, Sep. 23–26, 2007 (Tu5.2).

S. Datta, G. Dewey, J.M. Fastenau, M.K. Hudait, D. Loubychev, W.K. Liu, M. Radosavljevic, W. Rachmady and R. Chau, “Ultra High-Speed, 0.5V Supply Voltage In0.7Ga0.3As Quantum-Well Transistors on Silicon Substrate”, IEEE Electron Device Letts. 28, 685 (2007).

H.S. Djie, C.L. Tan, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, G.T. Dang, and W.H. Chang, “Ultrabroad Stimulated Emission from Quantum-dash Laser,” Appl. Phys. Lett. 91, 111116 (2007).

E. Lind, A.M. Crook, Z. Griffith, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, “560 GHz ft, fmax InGaAs/InP DHBT in a Novel Dry-etch Emitter Process”, 65th Device Research Conference, University of Notre Dame, IN, June 18?20, 2007, V.B-7.

T. Yang, Y. Xuan, P. Ye, W. Wang, J.C.M. Hwang, D. Lubyshev, J.M. Fastenau, W.K. Liu, T.D. Mishima, and M.B. Santos, “Capacitance-Voltage Characterization of InSb MOS Structures with ALD High-k Gate Dielectrics”, 49th Electronic Materials Conference, University of Notre Dame, IN, June 20?22, 2007, DD4.

Z. Griffith, E. Lind, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and A.W.K. Liu, “Sub 300nm InGaAs/InP Type-I DHBTs with a 150 nm Collector, 30 nm Base Demonstrating 755 GHz fmax and 416 f?”, 19th International Conference on InP and Related Materials, Matsue, Japan, May 14?18, 2007, WeA3-2, (Proceedings ISBN 1-4244-0874-1, IEEE, NJ, 2007, p. 403).

H.S. Djie, Y. Wang, B.S. Ooi, D.-N. Wang, J.C.M. Hwang, Y. Wu, X.-M. Fang, J.M. Fastenau, and A.W.K. Liu, G.T. Dang, and W.H. Chang, “Postgrowth Wavelength Engineering of InAs/InAlGaAs/InP Quantum-dash-in-well Lasers”, SPIE Photonics West OPTO 2007 Symposium OE11: Optoelectronic Integrated Circuits XI (6476-28), San Jose, Jan 20?25, 2007.

H.S. Djie, Y. Wang, B.S. Ooi, D.-N. Wang, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, G.T. Dang, and W.H. Chang, “Wavelength Tuning of InAs/InAlGaAs Quantum-dash-in-well Laser Using Postgrowth Intermixing”, Electron. Letts. 43, 33 (2007).

H.S. Djie, B.S. Ooi, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, and M. Hopkinson, “Room Temperature Broadband Emission of an InGaAs/GaAs Quantum Dots Laser”, Optics Letts. 32, 44 (2007), Virtual J. Nanoscale Sci. Technol. 15(2) (2007).

H.S. Djie, D.-N. Wang, B.S. Ooi, J.C.M. Hwang, X.-M. Fang, Y. Wu, J.M. Fastenau, and W.K. Liu, “Emission wavelength trimming of self-assembled InGaAs/GaAs Quantum Dots with GaAs/AlGaAs superlattices by rapid thermal annealing”, Thin Solid Films, 515, 4344 (2007).