2002 research papers
W. Songprakob, R. Zallen, D.V. Tsu, and W.K. Liu, "Inter-valenceband and Plasmon Optical Absorption in Heavily-doped GaAs:C", J. Appl. Phys. 91, 171 (2002).
K.K. Choi, S.V. Bandara, S.D. Gunapala, W.K. Liu, and J.M. Fastenau, "Detection Wavelength of InGaAs/AlGaAs Quantum Wells and Superlattices", J. Appl. Phys. 91, 551 (2002).
S. D. Gunapala, S.V. Bandara, J.K. Liu, S.B. Rafol, C.A. Shott, R. Jones, S. Laband, J. Woolaway II, J.M. Fastenau, and A.W.K. Liu, "9 mm Cutoff 640´512 Pixel GaAs/AlxGa1-xAs Quantum Well Infrared Photodetector Hand-held Camera", SPIE-AeroSense Conference, Orlando, FL, April 1-5, 2002, 4721-17 (invited), Proc. SPIE Vol. 4721, Infrared Detectors and Focal Plane Arrays VII, Eds. E.L. Dereniak and R.E. Sampson, (ISBN 0-8194-4471-5, SPIE, Washington, 2002), p.144.
Y. Wu, D. Lubyshev, X.-M. Fang, J.M. Fastenau, A.B. Cornfeld, W.K. Liu, H. Yang, H. Wang, and K. Radhakrishnan, J.C.M. Hwang, "A Comparative Study of DC and Microwave Characteristics of Lattice-matched InP HBTs and Metamorphic HBTs Grown by MBE", International Conference on GaAs Manufacturing Technology, San Diego, CA, April 8-11, 2002, 13A.
Z. Yu, R. Droopad, D. Jordan, J. Curless, Y. Liang, C. Overgaard, H. Li, A. Talin, T. Eschrich, B. Craigo, K. Eisenbeiser, R. Emrick, J. Finder, X. Hu, Y. Wei, J. Edwards, Jr., D. Convey, K. Moore, D. Marshall, J. Ramdani, L. Tisinger, W. Ooms, M. O'Steen, F. Towner, and T. Hierl, "GaAs-Based Heterostructures on Silicon", International Conference on GaAs Manufacturing Technology, San Diego, CA, April 8-11, 2002, 13E (invited).
R. Droopad, K. Eisenbeiser, T. Hierl, D. Lubyshev, W. Ooms, M. O'Steen, J. Ramdani, and F. Towner, "Growth of GaAs on Silicon", 14th International Conference on InP and Related Materials, Stockholm, Sweden, May 12-16, 2002, A4-7 (invited).
M. Dahlström, M. Urteaga, S. Krishnan, N. Parthasarathy, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau, and W.K. Liu, "Ultra-Wideband DHBTs using a Graded Carbon-Doped InGaAs Base", 14th International Conference on InP and Related Materials, Stockholm, Sweden, May 12-16, 2002, post-deadline paper.
O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang, J.M. Fastenau, L. Leung, F.J. Towner, A.B. Cornfeld and W.K. Liu, "MBE Production of Large-Diameter Metamorphic HEMT and HBT Wafers", J. Vac. Sci. Technol. B, 20, 1200 (2002).
S.D. Gunapala, S.V. Bandara, J.K. Liu, S.B. Rafol, C.A. Shott, R.W. Jones, S. Laband, J.T. Woolaway II, J.M. Fastenau, A.W.K. Liu, M.D. Jhabvala, and K.K. Choi, "640×512 Pixel Four-Band, Broadband, and Narrowband Quantum Well Infrared Photodetector Focal Plane Arrays", 47th Annual Meeting of SPIE, Seattle, WA, July 7-11, 2002, 4820-35 (invited).
S.V. Bandara, S. D. Gunapala, J.K. Liu, S.B. Rafol, C.A. Shott, R. Jones, S. Laband, J. Woolaway II, J.M. Fastenau, A.W.K. Liu, M. Jhabvala, and K.K. Choi, "Multiband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plan Arrays", 11th Annual AIAA/MDA Technology Conference, Monterey, CA, July 29-August 1, 2002.
S. Pradhan, P. Bhattacharya, and W.K. Liu, "A monolithically Integrated 1.55mm Photoreceiver-Laser Driver Optoelectronic Integrated Circuit", Electronics Letts. 38, 987 (2002).
O. Malis, W.K. Liu, J.M. Fastenau, R. Pelzel, K. Evans, A. Joel, P. Gong, S.W. Bland, and N. Moshegov, "MBE Development of Dilute Nitrides for Commercial Long-wavelength VCSEL Applications", 12th International Conference on Molecular Beam Epitaxy, San Francisco, CA, September 15-20, 2002, TuA1.
T. Hierl, M. O'Steen, R. Droopad, and O. Baklenov, "GaAs on Si Technology and Its Application to Power Amplifiers", International Conference on Solid State Devices and Materials, Nagoya, Japan, September 17-19, 2002.
X.-M. Fang, Y. Wu, C. Doss, D.I. Lubyshev, J.M. Fastenau, W.K. Liu, Y.M. Kim, and M.J.W. Rodwell, "Metamorphic Buffer Comparisons for M-HBT Grown by MBE", Compound Semiconductor Manufacturing Expo, San Jose, CA, November 11-13, 2002.
D.I. Lubyshev, K. Teker, P. Lee, Y. Wu, J.M. Fastenau, X.-M. Fang, C. Doss, A.B. Cornfeld, and W.K. Liu, "Commercial Production of Large Diameter InP-HBT Epiwafers by MBE", Compound Semiconductor Manufacturing Expo, San Jose, CA, November 11-13, 2002.
P Abbott, C Rohr, J P Connolly, I Ballard, K Barnham, R Ginige, B Corbett, G Clarke, S W Bland and M Mazzer, "A comparative study of bulk InGaAs and InGaAs/InGaAs strain compensated quantum well cells for thermophotovoltaic applications", 29th IEEE Photovoltaic Specialists Conference; New Orleans, USA; May 2002.
R Ginige, C Kelleher, B Corbett, J Hilgarth and G Clarke, "The Design, Fabrication and Evaluation of InGaAs/INP TPV Cells for Commercial Applications", Fifth Conference on Thermophotovoltaic Generation of Electricity, Rome, Italy, September 2002.
J P Connolly, P Abbott, I Ballard, K W J Barnham, C Rohr, R Ginige, B Corbett, G Clarke, S Bland and M Mazzer, "Characterisation and Modelling of the Spectral Response of Strain Compensated InGaAsP Quantum Well Cells for TPV Applications", Fifth Conference on Thermophotovoltaic Generation of Electricity, Rome, Italy, September 2002.
S A Rushworth, L M Smith, M S Ravetz, K M Coward, R Odedra, R Kanjolia, S W Bland, F Dimroth and A W Bett, "Correlation of reduced oxygen content in precursors with improved MOVPE layer quality", ICMOVPE, 2002 [Journal of Crystal Growth (in publication)].
K Cherkaoui, M E Murtagh, P V Kelly, G M Crean, S Cassette, S L Delage and S W Bland, "Defect study of GaInP/GaAs based heterojunction biplar transistor emitter layer", Journal of Applied Physics, 92, p2803-2806, 2002.
S W Bland, "Future challenges for MOVPE - an industrial perspective", Journal of Materials Science: Materials in Electronics, 13, p679-682, 2002.
J.Mimila-Arroyo, J.Chevallier and S.W.Bland, "Carbon reactivation kinetics in the base of heterojunction GaInP-GaAs bipolar transistor", Applied Physics Letters, 80, p3632, 2002.
G M Lewis, P M Smowton, P Blood, G Jones and S W Bland, "Measurement of TE and TM spontaneous emission and gain in tensile strained GaInP laser diodes", Applied Physics Letters, 80(19), p3488-3490, 2002.