2001 research

2001 research papers

W. Zhou, S. Pradhan. P. Bhattacharya, W.K. Liu, and D. Lubyshev, "Low-Power Phototransreceiver Arrays with Vertically Integrated Resonant-Cavity LEDs and Heterostructure Phototransistors", 14th Annual Meetings of LEOS, La Jolla, CA, November 12-15, 2001, ThU1.

S. Vijarnwannaluk, R. Zallen, W.K. Liu, M.L. Hsieh, and R.A. Stradling, "Optical Studies of GaAs:C Grown at Low Temperatures by Molecular Beam Epitaxy", American Physical Society March Meeting, Seattle, WA, March 12-16, 2001, C29.010.

W. Songprakob, R. Zallen, D.V. Tsu, and W.K. Liu, "Plasmon and inter-valence band absorption in heavily-doped p-type MBE-grown GaAs:C", American Physical Society March Meeting, Seattle, WA, March 12-16, 2001, X30.007.

R.K. Ahrenkiel, R. Ellingson, W. Metzger, D.I. Lubyshev, and W.K. Liu, "Auger Recombination in Heavily Carbon-doped GaAs", Appl. Phys. Letts. 78, 1879 (2001).

S. D. Gunapala, S.V. Bandara, J.K. Liu, J.M. Mumolo, F.M. Reininger, J.M. Fastenau, and A.W.K. Liu, "10- to 16-mm Broadband 640´512 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array", SPIE-AeroSense Conference, Orlando, FL, April 16-20, 2001, 4369-96.

S. Krishnan, M. Dahlström, T. Mathew, Y. Wei, D. Scott, M. Urteaga, M.J.W. Rodwell, W.K. Liu, D. Lubyshev, X.-M. Fang, and Y. Wu, "InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz fmax", 13th International Conference on InP and Related Materials, Nara, Japan, May 14-18, 2001, TuB1-2.

D. Lubyshev, Y. Wu, X.-M. Fang, T. Yurasits, W.K. Liu, A.B. Cornfeld, D. Mensa, S. Jaganathan, R. Pullela, M. Dahlström, P.K. Sundararajan, T. Mathew, and M. Rodwell, "MBE Growth of Large Diameter Heavily Doped InP-based Lattice-matched and Metamorphic HBTs", 13th International Conference on InP and Related Materials, Nara, Japan, May 14-18, 2001, WP-40.

D. Lubyshev, Y. Wu, X.-M. Fang, T. Yurasits, W.K. Liu, and A.B. Cornfeld, "Heavily Doped InP-based HBTs for New Wireless and Fiber-optic Telecommunication Applications", 2001 International Conference on GaAs Manufacturing Technology, Las Vegas, NV, May 21-24, 2001, 9B.01.

J.H. Lee, S.S. Li, M.Z. Tidrow and W.K. Liu, "Investigation of Multi-color, Broadband Quantum Well Infrared Photodetectors with Digital Graded Superlattice Barrier and Linear- Graded Barrier for Long Wavelength Applications", Infrared Physics & Technology, 42, 123 (2001).

S. Bandara, S. Gunapala, S. Rafol, D. Ting, J. Liu, J. Mumolo, T. Trinh, A.W.K. Liu, and J.M. Fastenau, "Quantum Well Infrared Photodetectors for Low Background Applications", Infrared Physics & Technology, 42, 237 (2001).

J.M. Fastenau, W.K. Liu, X.M. Fang, D.I. Loubychev, R.I. Pelzel, T.R. Yurasits, T.R. Stewart, J.H. Lee, S.S. Li, and M.Z. Tidrow, "Commercial Production of QWIP Wafers by Molecular Beam Epitaxy", Infrared Physics & Technology, 42, 407 (2001).

W.K. Liu, D. Lubyshev, X.-M. Fang, and T. Yurasits, "Metamorphic HBTs for New Wireless and Fiber-Optic Telecommunication Applications", Compound Semiconductor Manufacturing Expo, Boston, MA, July 9-11, 2001, 1H.4.

D. Lubvshev, W.K. Liu, T. R. Stewart, A.B. Cornfeld, X.-M. Fang, X. Xu, P. Specht, C. Kisielowski, M.S. Goorsky, J. Mirecki-Millunchick, C.S. Whelan, W.E. Hoke, P.F. Marsh, S.P. Svensson, "Strain Relaxation and Dislocation Filtering in Metamorphic HEMT Structures Grown on GaAs Substrates", J. Vac. Sci. Technol. B, 19, 1510 (2001).

L. Leung, D. Davison, A. Cornfeld, F. Towner, and D. Hartzell, "Cost-effective, High-volume Molecular Beam Epitaxy Using a Multi 6-in Wafer Reactor", J. Cryst. Growth, 227-228, 143 (2001).

X.M. Fang, T. Yurasits, D. Loubychev, A.W.K. Liu, M. DeBruzzi, S. Priddy, and C. Schiprett, "Improved Substrate Temperature Uniformity in a Commercial 4-inch Single-wafer MBE Reactor with a Dual-Zone Substrate Heater", J. Vac. Sci. Technol. B, 19, 1554 (2001).

O. Baklenov, A.B. Cornfeld, C. J. Doss, X.-M. Fang, J. M. Fastenau L. Leung, W.K. Liu, D. Lubyshev, Y. Luo, F.J. Towner, and Y. Wu, "Commercial Production of 4-Inch InP HBTs Using Molecular Beam Epitaxy", 13th American Conference on Crystal Growth and Epitaxy, Burlington, VT, August 12-16, 2001, 2B.3.

S.V. Bandara, S. D. Gunapala, J.K. Liu, S.B. Rafol, D.Z. Ting, J.M. Mumolo, F.M. Reininger, J.M. Fastenau, and A.W.K. Liu, "Large-Format Broadband Multicolor GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays", SPIE 46th Annual Meeting, International Symposium on Optical Science and Technology, San Diego, CA, July 29-August 3, 2001, 4454-06 (invited), Proc. SPIE Vol. 4454, Materials for Infrared Detectors, Ed. R. E. Longshore, (ISBN 0-8194-4168-6, SPIE, Washington, 2001), p.30.

K.K. Choi, S.V. Bandara, S.D. Gunapala, W.K. Liu, and J.M. Fastenau, "Detection Wavelength of InGaAs/AlGaAs Quantum Wells and Superlattices", 6th International Conference on Intersubband Transitions in Quantum Wells, Asilomar, CA, September 10-14, 2001, M4.7.

S. D. Gunapala, S.V. Bandara, J.K. Liu, J.M. Mumolo, F.M. Reininger, J.M. Fastenau, and A.W.K. Liu, "10- to 16-mm Broadband 640´512 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array", 2001 Intl. Conf. on Solid State Devices and Materials (SSDM), Tokyo, September 26-28, 2001, E-1-7, Proc. SPIE Vol. 4369, Infrared Technology and Applications XXVII, Eds. B.F. Andresen, G. F. Fulop, and M. Strojnik, (ISBN 0-8194-4064, SPIE, Washington, 2001), p.516.

J. Mirecki Millunchick, S. Manville, D. Lubyshev, X.M. Fang, J. M. Fastenau, W.K. Liu, and S.P. Svensson, "Morphology and Mobility of Metamorphic HEMT Structures Grown on Misoriented GaAs Substrates", 20th North American Conference on Molecular Beam Epitaxy Providence, RI, October 1-3, 2001, 5-1.

O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang, J.M. Fastenau, L. Leung, F.J. Towner, A.B. Cornfeld and W.K. Liu, "MBE Production of Large-Diameter Metamorphic HEMT and HBT Wafers", 20th North American Conference on Molecular Beam Epitaxy, Providence, RI, October 1-3, 2001, 5-3.

L. Jiang, S.S. Li, M.Z. Tidrow, W.R. Dyer, W.K. Liu, J. Fastenau, and T.R. Yurasits, "Three-Stack, Three-Color Quantum Well Infrared Photodetector for Mid-, Long-, and Very Long-Wavelength Infrared Detection", Appl. Phys. Lett. 79, 2982 (2001).

W. Zhou, S. Pradhan, P. Bhattacharya, W.K. Liu, and D. Lubyshev, "Low-Power Phototransceiver Arrays with Vertically Integrated Resonant-Cavity LEDs and Heterostructure Phototransistors", IEEE Photonics Technol. Letts. 13, 1218 (2001).

J Mimila-Arroyo and S Bland, "Carbon Reactivation Kinetics in GaAs; Its Dependence on Dopant Precursor, Doping Level and Layer Thickness".

G M Lewis, P M Smowton, P Blood, G Jones and S Bland, "Measurement of TE and TM Spontaneous Emission and Gain in Tensile Strained GaInP laser diodes".

J Mimila-Arroyo, A Lusson, J Chevallier, M Barbé, B Theys, F Jomard and S W Bland, "Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition", Applied Physics Letters, 79, p3095, 2001.

K J Weeks, S J C Irvine, A Stafford, S Jones, S W Bland and A Joel, "In situ reflectance monitoring in MOVPE of a multiwafer reactor", Materials Science and Engineering, B80, p46-49, 2001.

K.R. Evans and S.P. Roth, "Optical Sensing Opportunities in Production MBE", Digest of the 2000 IEEE/LEOS Summer Topical Meeting on Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, Aventura, FL, July 24-16, 2000 (ISBN 0769506453, IEEE, Piscataway, NJ, 2000), p. II29.