2000 research papers
S.Q. Murphy, J.L. Hicks, W.K. Liu, S.J. Chung, K.J. Goldammer, and M.B. Santos, "Studies of the Quantum Hall to Quantum Hall Insulator Transition in InSb Based 2DESs", Physica E, 6, 293 (2000).
J.L Hicks, S.Q. Murphy, S.J. Chung, K.J. Goldammer, W.K. Liu, and M.B. Santos, "Breakdown of the IQHE in InSb/InAlSb Quantum Wells", American Physical Society March Meeting, Minneapolis, MN, March 20-24, 2000, A17.006.
G.A. Khodaparast, B.A. Mason, R.E. Doezema, S.J. Chung, K.J. Goldammer, W.K. Liu, and M.B. Santos, "Electron spin resonance in InSb quantum wells", American Physical Society March Meeting, Minneapolis, MN, March 20-24, 2000, E28.007.
D.I. Lubyshev, W.K. Liu, T.R. Stewart, and A.B. Cornfeld, "A Comparative Study of As, Sb and P-based Metamorphic HEMTs", International Conference on GaAs Manufacturing Technology, Washington D.C., May 1-4, 2000, 6A.01.
D.I. Lubyshev, W.K. Liu, T.R. Stewart, X.M. Fang, A.B. Cornfeld, W.E. Hoke, S.P. Svensson, and J.M. Millunchick, "MBE Growth of High Quality Metamorphic HEMTs on GaAs", 12th International Conference on InP and Related Materials, Williamsburg, VA, May 14-18, 2000, WP2.13.
K.K. Choi, C.J. Chen, K.L Bacher, and D.C. Tsui, "New Designs and Applications of Corrugated QWIPs", Physica E, 7, 112 (2000).
S.J. Chung, N. Dai, G.A. Khodaparast, , J.L. Hicks, K.J. Goldammer, F. Brown, W.K. Liu, R.E. Dozema, S.Q. Murphy, and M.B. Santos, "Electronic Characterization of InSb Quantum Wells", Physica E, 7, 809 (2000).
W.K. Liu, D.I. Lubyshev, P. Specht, R. Zhao, E.R. Weber, A.J. SpringThorpe, R.W. Streater, S. Vijarnwannaluk, W. Songprakob, and R. Zallen, "Properties of Carbon-doped Low-temperature GaAs and InP Grown by Solid-source MBE Using CBr4", J. Vac. Sci. Technol. B, 18, 1594 (2000).
J.H. Lee, S.S. Li, M.Z. Tidrow and W.K. Liu, "Multi-color, Broadband Quantum Well Infrared Photodetectors with Digital Graded Superlattice Barrier and Linear- Graded Barrier for Long Wavelength Applications", QWIP 2000 Workshop, Dana Point, CA, July 27-29, 2000, A3.
J.M. Fastenau, W.K. Liu, X.M. Fang, D.I. Loubychev, R.I. Pelzel, T.R. Yurasits, T.R. Stewart, J.H. Lee, S.S. Li, and M. Z. Tidrow, "Commercial Production of QWIP Wafers by Molecular Beam Epitaxy", QWIP 2000 Workshop, Dana Point, CA, July 27-29, 2000, A34.
J.H. Lee, S.S. Li, M.Z. Tidrow, and W.K. Liu, "High Sensitivity Broadband Quantum Well Infrared Photodetector with Double/Linear-Graded Barrier for 8-12mm Detection", Electronics Letts. 36, 1058 (2000).
L. Leung, D. Davison, A. Cornfeld, F. Towner, and D. Hartzell, "Cost-effective, High-volume Molecular Beam Epitaxy Using a Multi 6-in Wafer Reactor", 11th International Conference on Molecular Beam Epitaxy, Beijing, China, September 11-15, 2000.
D. Lubvshev, W.K. Liu, T. R. Stewart, A. B. Cornfeld, X.-M. Fang, X. Xu, P. Specht, C. Kisielowski, M. S. Goorsky, J. Mirecki-Millunchick, C. S. Whelan, W. E. Hoke, P. F. Marsh, S. P. Svensson, "Strain Relaxation and Dislocation Filtering in Metamorphic HEMT Structures Grown on GaAs Substrates", 19th North American Conference on Molecular Beam Epitaxy, Tempe, AZ, October 15-18, 2000, 8.2.
X.M. Fang, T. Yurasits, D. Loubychev, A.W.K. Liu, M. DeBruzzi, S. Priddy, and C. Schiprett, "Improved Substrate Temperature Uniformity in a Commercial 4-inch Single-wafer MBE Reactor with a Dual-Zone Substrate Heater", 19th North American Conference on Molecular Beam Epitaxy, Tempe, AZ, October 15-18, 2000, P1.12.
W. Songprakob, R. Zallen, W.K. Liu, and K.L. Bacher, "Infrared Studies of Hole-Plasmon Excitations in Heavily-doped p-type MBE-Grown GaAs:C", Phys. Rev. B, 62, 4501 (2000).
D Burns, M Hetterich, A I Ferguson, E Bente, M D Dawson, J I Davies and S W Bland, "High Average Power (>20W) Nd:YVO4 Lasers Mode Locked by Strain Compensated Saturable Bragg Reflectors".Vol 17, No 6/June 2000/J Opt Soc Am B.
M Hetterich, M D Dawson, A Yu Egorov, D Bernklau, H Riechert, S W Bland and J I Davies, "Comparison of GaInNAs / GaAs and Strain-Compensated InGaAs / GaAsP Quantum Wells for 1200-1300 nm Diode Lasers".
I J Griffin, D Wolverson, J J Davies, M E Ismail, J Heffernan, S W Bland and G Duggan, "Band Structure Parameters of Quaternary Phosphide Semiconductor Alloys Investigated by Magneto-Optical Spectroscopy".
S A Rushworth, L M Smith, R T Blunt, J I Davies, S Hunjan and A Joel, "Solution CBr4 : An Improved MOVPE Dopant Source".
M S Ravetz, L M Smith, S A Rushworth, A B Leese, R Kanjolia, J I Davies and R T Blunt, "Properties of Solution TMI as an OMVPE Source", Journal of Electronic Materials, Vol. 29, No 1, 2000.
S Cassette, S L Delage, E Chartier, D Floriot, M A Poisson, J C Garcia, C Grattepain, J Mimila Arroyo, R Plana and S W Bland, "Hydrogen - Related Effects in GaInP / GaAs HBTs : Incorporation, Removal and Influence on Device Reliability".
G M Lewis, J D Thomson, H D Summers P M Smowton, P Blood, G Jones and S Bland, "Breakdown in Thermodynamic Balance Between Optical Gain and Spontaneous Emission in GaInP Quantum Well Lasers".
J Mimila-Arroyo and S W Bland "Acceptor Reactivation Kinetics in Heavily Carbon-Doped GaAs Epitaxial Layers", Applied Physics Letters, Volume 77, Number 8, 21 August 2000.
I J Griffin, D Wolverson, J J Davies, M Emam-Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, "Band Structure Parameters of Quaternary Phosphide Semiconductor Alloys Investigated by Magneto-Optical Spectroscopy", Semicond. Sci. Technol. 15 (2000).